TP: Die Bonders

Title Date Abstract From
High Accuracy Flip-Chip Equipement SEMI – 3D-Summit
This material is posted here with permission of SEMI.
Consideration on the design of high precision Flip-chip bonder for mass production SET
Results of the 2015 testbeam of 180 nm AMS High-Voltage CMOS sensor prototype June 30, 2016 Active pixel sensors based on the High-Voltage CMOS technology are being investigated as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC DPNC, University of Geneva, Switzerland
Evaluation of Sn-based Microbumping Technology for Hybrid IR Detectors, 10µm Pitch to 5µm Pitch ECTC 2015
This material is posted here with permission of IEEE.
Hybridization of Infrared detectors has relied on Indium balling for the last decades. Whereas this well-established process has proven its reliability through out the years, it becomes challenging to further decrease the balling pitch below 10µm, due to balling volume limitation. IMEC Leuven, Belgium SOFRADIR Veurey-Voroize, France
Challenges to be faced on Flip-chip Bonder to achieve Precision Requirements in Different Environments MINAPAD 2015
This material is posted here with permission of IMAPS.
This paper explores some challenges faced by flip-chip bonders, depending on the applications to be achieved and the environment, Research and Development or Production. SET
Interconnect and bonding techniques for pixelated X-ray and gamma-ray detectors 10th International Conference on Position Sensitive Detectors (2014) In the last decade, the Detector Development at the Technology departmentof the Science and Technology Facilities Council (STFC), U.K., established a variety of fabrication and bonding techniques to build pixelated X-ray and y-ray detector systems such as the spectroscopic X-ray imaging detector HEXITEC. UNIVERSITY OF SURREY, Guilford, Surrey, U.K.
Microbumping Technology for Hybrid IR detectors, 10µm pitch and beyond EPTC 2014
Singapore
In order to assess the feasability of a more mass-manufacturable process, IMEC has developed microbump technologies down to 10 µm pitch. The microbumps are based on Cu/Ni/Sn semi additive plating and built at wafer level using a process fully compatible with standard packaging infrastructures IMEC Leuven, Belgium SOFRADIR Veurey-Voroize, France
Development done on Device Bonder to address 3D requirements in a production environment IWLPC2014
San Jose, CA
This paper will explore the above challenges in 3D HVM and will present solutions and trade-offs using a systemslevel approach SET Saint-Jeoire, France
Die Attach Bonding using High-frequency Ultrasonic Energy for High-temperature application June 2014
Room-temperature die-attach bonding using ultrasonic energy was evaluated on Cu/In and Cu/Sn-3Ag metal stacks. IME – Journal of Electronics materials (abstract)
Wafer-level 3D integration with 5 micron interconnect pitch for infrared imaging applications June 2014
The use of 3D integration technology in focal plane array imaging devices has been shown to increase imaging capability while simultaneously decreasing device area and power consumption, as compared to analogous 2D designs. RTI International
High Density Interconnect Bonding of Heterogeneous Materials Using Non-Collapsible µbumps at 10 μm Pitch June 2014
Report on a successful demonstration of the use and reliability of CU/SN interconnection of heterogeneous semiconductor die RTI International
Flip-Chip Assembly FPA ORION 2014
Int’l Conference on Photoelectronics and Night Vision Devices
Flip-Chip Assembly for Focal Plane Array SET
Chip to wafer cooper direct bonding electrical characterization and thermal cycling December 2013
Study of the recent achievements in cooper direct bonding technology with oxide/cooper mixed surface CEA – LETI, MINATEC Campus
Micro-tube insertion into aluminum pads: Simulation and experimental validations ECTC 2013
This material is posted here with permission of IEEE.
Ultra-fine pitch flip CEA – LETI, MINATEC Campus
Aluminum to aluminum Bonding at Room Temperature ECTC 2013
This material is posted here with permission of IEEE.
High density and very low pitches face to face aluminum/aluminum cold bonding is feasable when using aluminum coated micro-tubes inserted into aluminum pads CEA – LETI, MINATEC Campus
Die-to-Die and Die-to-Wafer Bonding solution for High Density, Fine Pitch Micro-Bumped Die Device Packaging 2012
This material is posted here with permission of IMAPS.
Higher density interconnection using 3-Dimensional technology implies a pitch reduction and the use of micro-bumps. The micro-bump size reduction has a direct impact on the placement accuracy needed on the die placement and flip chip bonding equipment. The paper presents a die-to-die and die-to-wafer, high accuracy, die bonding solution illustrated by the flip chip assembly of a large 2x2cm die consisting of 1 million 10µm micro-bumps at 20µm pitch. SET, IMEC
High Accuracy Chip-to-Chip or Chip-to-Wafer Bonding methods for 3D-IC integration
MINAPAD 2012
This material is posted here with permission of IMAPS.
This paper explores the chip-to-chip and chip-to-wafer alignment schemes and the associated bonding techniques, including insitu reflow or thermo-compression with a local oxide reduction contributing to higher yield with reduction of the force or the temperature requirements. SET

Manuscript

Presentation

Process and Equipment Enhancements for C2W bonding in a 3D Integration Scheme IWLPC 2011
Originally published in the IWLPC Proceedings.
This paper reviews three major areas of process or equipment development, the throughput enhancement by using a sacrificial adhesive to temporarily tack the dice before collective bonding, the in-situ removal and prevention of surface oxides at the bonding interface, and the local environmental control to reduce particulates and other airborne contaminants. SETNA, Sematech, SET
A 10 μm Pitch Interconnection Technology using Micro Tube Insertion into Al-Cu for 3D Applications ECTC 2011
This material is posted here with permission of IEEE.
Future 3-D applications require a very low pitch for interstrata vertical interconnection. The last ITRS assessment for vertical interconnection predicts a need for… CEA-LETI, Minatec, LEM3-CNRS
Low Profile 3D Silicon-on-Silicon Multi-chip Assembly ECTC 2011
This material is posted here with permission of IEEE.
The focus of this paper is multi-chip 3D silicon-on-silicon assembly using low-profile lead-free (Sn-Cu) solder interconnects. IBM T.J. Watson Research Center
Low Temperature Bonding of High Density Large Area Array Interconnects for 3D Integration IMAPS 2011
This material is posted here with permission of IMAPS
The results of bonding and stress testing of Cu/Sn-Cu bonded dice and Cu-Cu thermo-compression bonded dice…. RTI International
Chip-to-Wafer Technologies for High Density 3D Integration MINAPAD 2011
This material is posted here with permission of IMAPS
CEA-Leti partnering with SET, STMicroelectronics, ALES and CNRS-CEMES on advanced Chip-to-Wafer technologies for 3D Integration in the frame of the PROCEED project, a 4.2 Million Euros, 24 months project supported by French FIU (Fond Interministeriel Unique). Started in 2009, the goal of the PROCEED project is to demonstrate high alignment accuracy (<1µm) of chip-to-wafer structures made by direct metallic bonding. CEA Leti, Minatec campus, CNRS Cemes, ALES, SET, ST Microelectronics
3D-IC Integration using D2C or D2W Alignment Schemes together with Local Oxide Reduction Device Packaging 2011
This material is posted here with permission of IMAPS
3-Dimensional interconnection of high density integrated circuits enables building devices with greater functionality with higher performances in a smaller space. This paper explores the chip-to-chip and chip-to-wafer alignment and the associated bonding techniques such as in-situ reflow or thermocompression with a local oxide reduction which contributes to higher yield together with reduction of the force or temperature requirements. SET, SETNA

Manuscript

Presentation

Embedded active device packaging technology for real DDR2 memory chips IWLPC 2010
Originally published in the IWLPC Proceedings
As high-speed, high-density, and high-performance are the primary IC development targets, packaging becomes key technology… Industrial Technology Research Institute (ITRI)
Flip-chip die bonding: an enabling technology for 3D integration IWLPC 2010
Originally published in the IWLPC Proceedings
3-Dimensional Integration of Integrated Circuits is a method to build greater functionality into ever-smaller spaces for electronic circuitry, wherein dice of varying sizes, materials, or even application types are electrically and mechanically bonded together SET NA, SET
Fabrication and performance of InAs/GaSb-based superlattice LWIR detectors SPIE Defense, Sensing
& Security
June 2010Copyright 2010 SPIE
InAs/GaSb-based type II superlattices (T2SL) offer a manufacturable FPA technology with FPA size, scalability and cost advantages over HgCdTe. HRL Laboratories
Ultrathin 3D ACA FlipChip-In-Flex Technology ECTC
June 2010This material is posted here with permission of IEEE.
Die thickness of common, high-volume chip stacks range between 50-100 µm while thinning industry aims towards ultrathin… Berlin Technical University, NB Technologies and Fraunhofer IZM.
Three Chips Stacking with Low Volume Solder Using Single Re-Flow Process ECTC
June 2010This material is posted here with permission of IEEE.
Miniaturized 3D package with shorter distances between chips are needed for the mobile and high frequency applications. Institute of Microelectronics – A*STAR
Insertion Bonding: A Novel Cu-Cu Bonding Approach for 3D Integration
ECTC 2010
This material is posted here with permission of IEEE.
A novel low temperature Cu-Cu bonding approach called the insertion bonding technique has been developed. IMEC and the Katholieke Universiteit Leuven
Die-to-wafer bonding of thin dies using a 2-step approach: high accuracy placement, then gang bonding
Device Packaging 2010
This material is posted here with permission of IMAPS.
25 um thick dies, mounted on thick carrier die, were placed on a 300mm landing wafer using the High Accuracy Die Bonder SET-FC300. The bonding process was either Cu/Cu or Cu/Sn with respective pitch of 108 µm and 408 µm… SET, IMEC
Technical Bulletin N°3 February 2010 The SET Technical Bulletin is a compilation of technical articles written by our clients. Each article provides unique insights into the exciting area of C2W and C2C bonding. CEA-Leti, IMEC, ITRI,IME-A*Star, RTI, etc…
RF MEMS and flip-chip for space flight demonstrator
June 2009 The next generation of telecommunication satellites payloads will require higher performances and higher.. Thales Alenia Space
Electrical characterization of high count, 10 µm pitch, room-temperature vertical interconnections Device Packaging 2009
This material is posted here with permission of IMAPS.
In order to increase the format of heterogeneous staring arrays to 2Kx2K pixels or even larger complexities, limited substrate size and cost. CEA-LETI
Reflow soldering and Tip in Buried Box (TB2) Techniques for Ultrafine Pitch Megapixels Imaging Array ECTC 2008
This material is posted here with permission of IEEE.
Flip chip is a high-density and highly reliable interconnection technology which is mandatory for the fabrication of high end heterogeneous imaging arrays. The control of ultra-fine pitch (10µm) and high bumps count flip-chip bonding technology represents a challenge on the roadmap of next generation devices.
This paper describes and compares in details two new flip chip technologies that can address the challenges at the 10µm pitch node: a modified reflow soldering technology and a thermocompression “tip in buried box” (TB2) insertion technology.
CEA-LETI